
2,4-Dichloro-5-fluoropyrimidine | CAS:2927-71-1
2,4-Dichloro-5-fluoropyrimidine
- 名称:2,4-二氯-5-氟嘧啶; 5-氟-2,4-二氯嘧啶 | 2,4-Dichloro-5-fluoropyrimidine
- CAS号:2927-71-1
- 别名:
- 分子式:C4HCl2FN2
- 分子量:166.97
- EINESC号:
产品描述
物理化学性质
熔点 | 37-41 ºC |
---|---|
闪点 | 223 ºF |
安全数据
危险品标志 | Xi |
---|---|
危险类别码 | R36/37/38 |
安全说明书 | S26;S36 |
产品合成路线
名称 | CAS号 |
---|
更多
文章
同行评议文献
Scattering lens resolves sub-100 nm structures with visible light.E G van Putten et al.Physical review letters, 106(19), 193905-193905 (2011-06-15)
Surfactant-free, large-scale, solution-liquid-solid growth of gallium phosphide nanowires and their use for visible-light-driven hydrogen production from water reduction.Jianwei Sun et al.Journal of the American Chemical Society, 133(48), 19306-19309 (2011-11-05)
Effect of low-energy gallium-aluminum-arsenide and aluminium gallium indium phosphide laser irradiation on the viability of C2C12 myoblasts in a muscle injury model.Marcos Paulo Pinheiro Ferreira et al.Photomedicine and laser surgery, 27(6), 901-906 (2009-08-25)
Mid-infrared optical parametric oscillators based on uniform GaP waveguides.Ivan Avrutsky et al.Optics express, 18(19), 20370-20383 (2010-10-14)
Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires.Mohammad Montazeri et al.Nano letters, 10(3), 880-886 (2010-02-06)
Stretchable semiconductor technologies with high areal coverages and strain-limiting behavior: demonstration in high-efficiency dual-junction GaInP/GaAs photovoltaics.Jongho Lee et al.Small (Weinheim an der Bergstrasse, Germany), 8(12), 1851-1856 (2012-04-03)
Resonance enhanced large third order nonlinear optical response in slow light GaInP photonic-crystal waveguides.I Cestier et al.Optics express, 18(6), 5746-5753 (2010-04-15)
Second harmonic generation in gallium phosphide photonic crystal nanocavities with ultralow continuous wave pump power.Kelley Rivoire et al.Optics express, 17(25), 22609-22615 (2010-01-07)
High quantum efficiency GaP avalanche photodiodes.Dion McIntosh et al.Optics express, 19(20), 19607-19612 (2011-10-15)
Time domain switching/demultiplexing using four wave mixing in GaInP photonic crystal waveguides.I Cestier et al.Optics express, 19(7), 6093-6099 (2011-04-01)
Experimental demonstration of self-aligned InP/InGaAsP polarization converter for polarization multiplexed photonic integrated circuits.Masaru Zaitsu et al.Optics express, 21(6), 6910-6918 (2013-04-03)
Optical antenna effect in semiconducting nanowires.G Chen et al.Nano letters, 8(5), 1341-1346 (2008-04-22)
Cavity-enhanced stimulated raman scattering from short GaP nanowires.Jian Wu et al.Nano letters, 9(9), 3252-3257 (2009-08-15)
Neurite outgrowth and synaptophysin expression of postnatal CNS neurons on GaP nanowire arrays in long-term retinal cell culture.Gaëlle Piret et al.Biomaterials, 34(4), 875-887 (2012-11-08)
DNA molecules on GaP (100) surfaces: spectroscopic characterization and biospecificity assessment.Rosangelly Flores-Perez et al.Chemphyschem : a European journal of chemical physics and physical chemistry, 9(11), 1528-1530 (2008-06-05)
Soft tissue reactions evoked by implanted gallium phosphide.Cecilia E Linsmeier et al.Biomaterials, 29(35), 4598-4604 (2008-09-20)
Nanoscale phase dynamics of the normal tear film.Santosh Khanal et al.Nanomedicine : nanotechnology, biology, and medicine, 6(6), 707-713 (2010-07-06)
Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.Hwa Sub Oh et al.Journal of nanoscience and nanotechnology, 13(1), 564-567 (2013-05-08)
Imaging and organelle distribution of fluorescent InGaP/ZnS nanoparticles in glial cells.Maik Behrendt et al.Nanomedicine (London, England), 4(7), 747-761 (2009-10-21)
Analysis of the systemic effect of red and infrared laser therapy on wound repair.Simone Marja Rodrigo et al.Photomedicine and laser surgery, 27(6), 929-935 (2009-08-28)
InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.Michele Natrella et al.Optics express, 20(17), 19279-19288 (2012-10-06)
Dependence of InGaP nanowire morphology and structure on molecular beam epitaxy growth conditions.A Fakhr et al.Nanotechnology, 21(16), 165601-165601 (2010-03-30)
Three-dimensional morphology of GaP-GaAs nanowires revealed by transmission electron microscopy tomography.Marcel A Verheijen et al.Nano letters, 7(10), 3051-3055 (2007-09-25)
Nanowire-based electrode for acute in vivo neural recordings in the brain.Dmitry B Suyatin et al.PloS one, 8(2), e56673-e56673 (2013-02-23)
Induction of autophagy in porcine kidney cells by quantum dots: a common cellular response to nanomaterials?Stephan T Stern et al.Toxicological sciences : an official journal of the Society of Toxicology, 106(1), 140-152 (2008-07-18)
Assessment of the passivation capabilities of two different covalent chemical modifications on GaP(100).David Richards et al.Langmuir : the ACS journal of surfaces and colloids, 26(11), 8141-8146 (2010-02-04)
备注
Products protected by valid patents are not offered for sale in countries where the sale of such products constitutes a patent infringement and its liability is at buyer's risk.
Products currently covered by valid US Patents are offered for R&D use in accordance with 35 USC 271 +A13(1).
名称 | CAS号 |
---|

相关产品
相关资讯
问
热门标签
询 单
请 填 写 相 关 信 息
- 请填写产品名称!
- CAS号
- 请正确填写公司名称!
- 请正确填写联系人!
- 请正确填写联系电话!
- 请正确填写联系邮箱!
- 请描述您的问题!