熔点	150-153 ºC

危险品标志	C
危险类别码	R34
安全说明书	S26;S36/37/39;S45

来源	SDS样本
没有数据	没有数据

产品合成路线

更多

名称	CAS号

更多

文章

同行评议文献

AlN passivation layer-mediated improvement in tensile failure of flexible ZnO:Al thin films.Hong Rak Choi et al.ACS applied materials & interfaces, 2(9), 2471-2474 (2010-08-20) The H2 dissociation on the BN, AlN, BP and AlP nanotubes: a comparative study.Javad Beheshtian et al.Journal of molecular modeling, 18(6), 2343-2348 (2011-10-08) AlN/3C-SiC composite plate enabling high-frequency and high-Q micromechanical resonators.Chih-Ming Lin et al.Advanced materials (Deerfield Beach, Fla.), 24(20), 2722-2727 (2012-04-13) Hybrid density functional theory studies of AlN and GaN under uniaxial strain.Lixia Qin et al.Journal of physics. Condensed matter : an Institute of Physics journal, 25(4), 045801-045801 (2012-12-19) NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.Mohammad T Baei et al.Journal of molecular modeling, 18(9), 4427-4436 (2012-05-17) 1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.Chengjie Zuo et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 82-87 (2009-12-31) High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics.Wolfram H P Pernice et al.Optics express, 20(11), 12261-12269 (2012-06-21) Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.J Hees et al.Nanotechnology, 24(2), 025601-025601 (2012-12-12) Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.Fang Qian et al.Nano letters, 12(6), 3344-3350 (2012-05-19) A comparative study on the B12N12, Al12N12, B12P12 and Al12P12 fullerene-like cages.Javad Beheshtian et al.Journal of molecular modeling, 18(6), 2653-2658 (2011-11-17) FEM simulation of Rayleigh waves for CMOS compatible SAW devices based on AlN/SiO₂/Si(100).Udo Christian Kaletta et al.Ultrasonics, 54(1), 291-295 (2013-05-21) Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.Elad Gross et al.Optics express, 21(3), 3800-3808 (2013-03-14) A new antenna system for microwave non-invasive hyperthermia lipolysis.Sangbok Park et al.Conference proceedings : ... Annual International Conference of the IEEE Engineering in Medicine and Biology Society. IEEE Engineering in Medicine and Biology Society. Annual Conference, 2012, 5683-5686 (2013-02-01) Tunable p-type conductivity and transport properties of AlN nanowires via Mg doping.Yong-Bing Tang et al.ACS nano, 5(5), 3591-3598 (2011-04-13) First-principles prediction on electronic and magnetic properties of hydrogenated AlN nanosheets.Chang-wen Zhang et al.Journal of computational chemistry, 32(14), 3122-3128 (2011-08-05) Three-dimensional GaN/AlN nanowire heterostructures by separating nucleation and growth processes.Santino D Carnevale et al.Nano letters, 11(2), 866-871 (2011-01-27) Electricity generation based on one-dimensional group-III nitride nanomaterials.Xuebin Wang et al.Advanced materials (Deerfield Beach, Fla.), 22(19), 2155-2158 (2010-06-22) Integration of GaN/AlN all-optical switch with SiN/AlN waveguide utilizing spot-size conversion.Norio Iizuka et al.Optics express, 17(25), 23247-23253 (2010-01-07) Electric field effect on (6,0) zigzag single-walled aluminum nitride nanotube.Mohammad T Baei et al.Journal of molecular modeling, 18(9), 4477-4489 (2012-05-31) Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.A Lupu et al.Optics express, 20(11), 12541-12549 (2012-06-21) Patterned growth and field-emission properties of AlN nanocones.Ning Liu et al.ACS applied materials & interfaces, 1(9), 1927-1930 (2010-04-02) Broadband directional coupling in aluminum nitride nanophotonic circuits.Matthias Stegmaier et al.Optics express, 21(6), 7304-7315 (2013-04-03) Successful retrieval of 29 ALN inferior vena cava filters at a mean of 25.6 months after placement.Olivier Pellerin et al.Journal of vascular and interventional radiology : JVIR, 24(2), 284-288 (2012-12-04) Electronic sensor for sulfide dioxide based on AlN nanotubes: a computational study.Javad Beheshtian et al.Journal of molecular modeling, 18(10), 4745-4750 (2012-06-09) Theoretical analysis of SAW propagation characteristics in (100) oriented AlN/diamond structure.Ruyen Ro et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 57(1), 46-51 (2009-12-31) Tactile multisensing on flexible aluminum nitride.Simona Petroni et al.The Analyst, 137(22), 5260-5264 (2012-09-27) Tunability of aluminum nitride acoustic resonators: a phenomenological approach.Emmanuel Defay et al.IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 58(12), 2516-2520 (2011-12-01)

备注